Determination of foreign atoms in Hg1−xCdxTe by means of flameless AAS
Identifieur interne : 000336 ( Main/Exploration ); précédent : 000335; suivant : 000337Determination of foreign atoms in Hg1−xCdxTe by means of flameless AAS
Auteurs : RBID : ISTEX:216_1992_Article_BF00633560.pdfAbstract
The concentration of various foreign atoms in the compositional semiconductor Hg1−xCdxTe (x=0.2) has been determined by atomic absorption spectroscopy (AAS) and SIMS. The first problem of interest included the control of In doping of the (Hg,Cd)Te-melt solution and the epitaxial layers grown by step-cooling method. On the basis of analytical results it was possible to estimate the distribution coefficient k for the incorporation of indium into Hg1−xCdxTe. A value of k=3.2 has been found. This distribution coefficient did not change in the concentration range of In from 1×1016 atoms to 1×1018 atoms cm−3 in the melt solution. A distribution coefficient of about 3.0 was also determined by PIXE investigations. The second investigation concerned the level of background impurities in the bulk of HgCdTe crystals. The concentrations of some fast acceptors like Cu and Ag were determined. In the case of Ag it was confirmed, that the p-carrier concentration is influenced by the impurity level of Ag.
DOI: 10.1007/BF00633560
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Boeck</name><affiliation wicri:level="1"><mods:affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin</wicri:regionArea><wicri:noRegion>Berlin</wicri:noRegion><placeName><settlement type="city">Berlin</settlement><region type="land" nuts="2">Berlin</region></placeName></affiliation></author><author><name>C. Frank</name><affiliation wicri:level="1"><mods:affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin</wicri:regionArea><wicri:noRegion>Berlin</wicri:noRegion><placeName><settlement type="city">Berlin</settlement><region type="land" nuts="2">Berlin</region></placeName></affiliation></author><author><name>K. Jacobs</name><affiliation wicri:level="1"><mods:affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin</wicri:regionArea><wicri:noRegion>Berlin</wicri:noRegion><placeName><settlement type="city">Berlin</settlement><region type="land" nuts="2">Berlin</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:216_1992_Article_BF00633560.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF00633560</idno><idno type="wicri:Area/Main/Corpus">000634</idno><idno type="wicri:Area/Main/Curation">000634</idno><idno type="wicri:Area/Main/Exploration">000336</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The concentration of various foreign atoms in the compositional semiconductor Hg1−xCdxTe (x=0.2) has been determined by atomic absorption spectroscopy (AAS) and SIMS. The first problem of interest included the control of In doping of the (Hg,Cd)Te-melt solution and the epitaxial layers grown by step-cooling method. On the basis of analytical results it was possible to estimate the distribution coefficient k for the incorporation of indium into Hg1−xCdxTe. A value of k=3.2 has been found. This distribution coefficient did not change in the concentration range of In from 1×1016 atoms to 1×1018 atoms cm−3 in the melt solution. A distribution coefficient of about 3.0 was also determined by PIXE investigations. The second investigation concerned the level of background impurities in the bulk of HgCdTe crystals. The concentrations of some fast acceptors like Cu and Ag were determined. In the case of Ag it was confirmed, that the p-carrier concentration is influenced by the impurity level of Ag.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="6ea4aab37ef9db4a04d28f6eb1a9558b0d672c28"><titleInfo lang="eng"><title>Determination of foreign atoms in Hg1−xCdxTe by means of flameless AAS</title></titleInfo><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Günther</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Versuchs- und Lehranstalt für Brauereiwesen, Spirituosenfabrikation und Fermentaton, Seestrasse 13, W-1000, Berlin 65, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Boeck</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Frank</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Jacobs</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Crystallography and Materials Science, Humboldt University Berlin, Invalidenstrasse 110, O-1040, Berlin, Federal Republic of Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Symposium Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1992-03-03</dateCreated><dateValid encoding="w3cdtf">2004-10-28</dateValid><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The concentration of various foreign atoms in the compositional semiconductor Hg1−xCdxTe (x=0.2) has been determined by atomic absorption spectroscopy (AAS) and SIMS. The first problem of interest included the control of In doping of the (Hg,Cd)Te-melt solution and the epitaxial layers grown by step-cooling method. On the basis of analytical results it was possible to estimate the distribution coefficient k for the incorporation of indium into Hg1−xCdxTe. A value of k=3.2 has been found. This distribution coefficient did not change in the concentration range of In from 1×1016 atoms to 1×1018 atoms cm−3 in the melt solution. A distribution coefficient of about 3.0 was also determined by PIXE investigations. The second investigation concerned the level of background impurities in the bulk of HgCdTe crystals. The concentrations of some fast acceptors like Cu and Ag were determined. 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